Технічний опис VN3205N3-G-P002 Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Інші пропозиції VN3205N3-G-P002
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VN3205N3-G-P002 | Виробник : Microchip Technology |
 Description: MOSFET N-CH 50V 1.2A TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
товару немає в наявності |
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VN3205N3-G-P002 | Виробник : Microchip Technology |
MOSFETs N-CH Enhancmnt Mode MOSFET |
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| VN3205N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 1.2A; Idm: 8A; 1W; TO92 Mounting: THT Drain current: 1.2A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 8A Case: TO92 Drain-source voltage: 50V |
товару немає в наявності |