VP0109N3-G Microchip Technology

Description: MOSFET P-CH 90V 250MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 90 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Tj), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.