VP0808L-G

Виробник: MICROCHIP
Description: MICROCHIP - VP0808L-G - Leistungs-MOSFET, p-Kanal, 80 V, 280 mA, 5 ohm, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 280mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 5ohm
SVHC: No SVHC (04-Feb-2026)

Виробник: Microchip Technology
Description: MOSFET P-CH 80V 280MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V

Виробник: Microchip Technology
MOSFETs 80V 5Ohm