Технічний опис VQ3001P-E3 Vishay
Description: MOSFET 2N/2P-CH 30V 0.85A, Packaging: Tube, Configuration: 2 N and 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V, Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Part Status: Obsolete.
Інші пропозиції VQ3001P-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VQ3001P-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N/2P-CH 30V 0.85A Packaging: Tube Configuration: 2 N and 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 2.5V @ 1mA Part Status: Obsolete |
товару немає в наявності |