VS-10ETF02-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
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Технічний опис VS-10ETF02-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 200 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active.
Інші пропозиції VS-10ETF02-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-10ETF02-M3 | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3 |
товару немає в наявності |