VS-10ETF04S-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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Технічний опис VS-10ETF04S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 200 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 400 V.
Інші пропозиції VS-10ETF04S-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-10ETF04S-M3 | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3 |
товару немає в наявності |