Технічний опис VS-10ETF06-M3 Vishay
Description: DIODE GEN PURP 600V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Інші пропозиції VS-10ETF06-M3
| Фото | Назва | Виробник | Інформація |
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VS-10ETF06-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
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VS-10ETF06-M3 | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3 |
товару немає в наявності |