VS-1EMH01-M3/5AT Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 15.2 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 7500+ | 6.92 грн |
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Технічний опис VS-1EMH01-M3/5AT Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 15.2 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції VS-1EMH01-M3/5AT за ціною від 6.40 грн до 32.44 грн
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VS-1EMH01-M3/5AT | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO214AC Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 15.2 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 8595 шт: термін постачання 21-31 дні (днів) |
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