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Технічний опис VS-1N3891 Vishay Semiconductors
Description: DIODE GEN PURP 200V 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V.
Інші пропозиції VS-1N3891
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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VS-1N3891 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 12A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
VS-1N3891 | VISHAY |
Description: VISHAY - VS-1N3891 - Diodenmodul, Silizium, 200 V, 12 A, 1.4 V, DO-203AA, 2 Pin(s) Durchlassstoßstrom: 150 Durchschnittlicher Durchlassstrom: 12 Anzahl der Pins: 2 Konfiguration Diodenmodul: - Durchlassspannung, max.: 1.4 Bauform - Diode: DO-203AA Wiederkehrende Spitzensperrspannung: 200 Betriebstemperatur, max.: 150 Produktpalette: VS-1N SVHC: To Be Advised |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-1N3891 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-1N3891 |
|
Виробник: VISHAY
Description: VISHAY - VS-1N3891 - Diodenmodul, Silizium, 200 V, 12 A, 1.4 V, DO-203AA, 2 Pin(s)
Durchlassstoßstrom: 150
Durchschnittlicher Durchlassstrom: 12
Anzahl der Pins: 2
Konfiguration Diodenmodul: -
Durchlassspannung, max.: 1.4
Bauform - Diode: DO-203AA
Wiederkehrende Spitzensperrspannung: 200
Betriebstemperatur, max.: 150
Produktpalette: VS-1N
SVHC: To Be Advised
Description: VISHAY - VS-1N3891 - Diodenmodul, Silizium, 200 V, 12 A, 1.4 V, DO-203AA, 2 Pin(s)
Durchlassstoßstrom: 150
Durchschnittlicher Durchlassstrom: 12
Anzahl der Pins: 2
Konfiguration Diodenmodul: -
Durchlassspannung, max.: 1.4
Bauform - Diode: DO-203AA
Wiederkehrende Spitzensperrspannung: 200
Betriebstemperatur, max.: 150
Produktpalette: VS-1N
SVHC: To Be Advised
товару немає в наявності
В кошику
од. на суму грн.