Технічний опис VS-20ETF02STRR-M3 Vishay
Description: DIODE GEN PURP 200V 20A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 160 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції VS-20ETF02STRR-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-20ETF02STRR-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 20A TO263ABCurrent - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
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VS-20ETF02STRR-M3 | Виробник : Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
товару немає в наявності |