VS-20ETF10PBF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Технічний опис VS-20ETF10PBF Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 160 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції VS-20ETF10PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-20ETF10PBF | Виробник : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT VS-20ETF10-M3 |
товару немає в наявності |