Технічний опис VS-20ETS12STRR-M3 Vishay
Description: DIODE STANDARD 1200V 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції VS-20ETS12STRR-M3
Фото | Назва | Виробник | Інформація |
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VS-20ETS12STRR-M3 | Виробник : Vishay |
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товару немає в наявності |
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VS-20ETS12STRR-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
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VS-20ETS12STRR-M3 | Виробник : Vishay Semiconductors |
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товару немає в наявності |
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VS-20ETS12STRR-M3 | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 1.2kV; 20A; D2PAK,TO263AB; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Max. forward impulse current: 0.3kA Case: D2PAK; TO263AB Max. forward voltage: 1.1V Leakage current: 1mA Quantity in set/package: 800pcs. |
товару немає в наявності |