VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 25A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 25A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 25A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції VS-25ETS10S-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-25ETS10S-M3 | Виробник : Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
товару немає в наявності |