VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1KV 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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Технічний опис VS-25ETS10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 25A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Інші пропозиції VS-25ETS10S-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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VS-25ETS10S-M3 | Виробник : Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
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