VS-2EFH01HM3/I Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 12+ | 28.02 грн |
| 19+ | 17.83 грн |
| 100+ | 12.64 грн |
| 500+ | 9.57 грн |
| 1000+ | 7.82 грн |
| 2500+ | 7.68 грн |
| 5000+ | 6.77 грн |
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Технічний опис VS-2EFH01HM3/I Vishay Semiconductors
Description: DIODE STANDARD 100V 2A DO219AB, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 16 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції VS-2EFH01HM3/I за ціною від 7.49 грн до 32.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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VS-2EFH01HM3/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 100V 2A DO219ABQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 16 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 5359 шт: термін постачання 21-31 дні (днів) |
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| VS-2EFH01HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 2A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 5359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 15+ | 21.56 грн |
| 100+ | 12.93 грн |
| 500+ | 10.47 грн |
| 1000+ | 9.13 грн |
| 2000+ | 8.51 грн |
| 5000+ | 7.49 грн |