Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > VS-30EPH03-N3

VS-30EPH03-N3 Vishay General Semiconductor - Diodes Division

Name: VS-30EPH03-N3
Brand: Vishay General Semiconductor - Diodes Division
SKU: 13670195-3
Price: 182.52 UAH
Availability: InStock

Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V

на замовлення 1228 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
1+	390.29 грн
25+	298.12 грн
100+	255.53 грн
500+	213.16 грн
1000+	182.52 грн

Відгуки про товар

Написати відгук

Технічний опис VS-30EPH03-N3 Vishay General Semiconductor - Diodes Division

Description: DIODE GP 300V 30A TO247AC, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 38 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247AC Modified, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A, Current - Reverse Leakage @ Vr: 60 µA @ 300 V.