| Кількість | Ціна |
|---|---|
| 2+ | 278.14 грн |
| 10+ | 180.35 грн |
| 100+ | 110.41 грн |
| 500+ | 107.60 грн |
| 800+ | 102.68 грн |
| 2400+ | 89.31 грн |
Відгуки про товар
Написати відгук
Технічний опис VS-3C05ET12S2L-M3 Vishay
Description: DIODE SIL CARB 1200V 5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 20pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 5 A, Power Dissipation (Max): 60 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Інші пропозиції VS-3C05ET12S2L-M3 за ціною від 163.59 грн до 361.56 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VS-3C05ET12S2L-M3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SIL CARB 1200V 5A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 20pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 5 A Power Dissipation (Max): 60 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
|
| VS-3C05ET12S2L-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE SIL CARB 1200V 5A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 361.56 грн |
| 10+ | 230.31 грн |
| 100+ | 163.59 грн |