VS-3C05ET12T-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE SIL CARB 1200V 5A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 20pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 5 A, Power Dissipation (Max): 60 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.