| Кількість | Ціна |
|---|---|
| 2+ | 312.60 грн |
| 10+ | 177.92 грн |
| 100+ | 141.35 грн |
| 500+ | 125.18 грн |
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Технічний опис VS-3C05ET12T-M3 Vishay
Description: DIODE SIL CARB 1200V 5A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 20pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 5 A, Power Dissipation (Max): 60 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Інші пропозиції VS-3C05ET12T-M3 за ціною від 123.47 грн до 315.67 грн
| Фото | Назва | Виробник | Інформація |
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VS-3C05ET12T-M3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SIL CARB 1200V 5A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 20pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 5 A Power Dissipation (Max): 60 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
на замовлення 939 шт: термін постачання 21-31 дні (днів) |
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| VS-3C05ET12T-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 20pF @ 800V, 1MHz
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Max: 5 A
Power Dissipation (Max): 60 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 315.67 грн |
| 50+ | 169.18 грн |
| 100+ | 155.46 грн |
| 500+ | 123.47 грн |