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VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
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Технічний опис VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 255pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Current - Reverse Leakage @ Vr: 35 µA @ 650 V.
Інші пропозиції VS-3C06ET07S2L-M3 за ціною від 75.41 грн до 255.80 грн
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VS-3C06ET07S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: 650 V POWER SIC GEN 3 MERGED PIN Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 255pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 35 µA @ 650 V |
на замовлення 1598 шт: термін постачання 21-31 дні (днів) |
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VS-3C06ET07S2L-M3 | Vishay Semiconductors |
SiC Schottky Diodes RECT 650V 6A SM POWER SIC |
на замовлення 1271 шт: термін постачання 21-30 дні (днів) |
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| VS-3C06ET07S2L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
на замовлення 1598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 249.02 грн |
| 10+ | 215.29 грн |
| 100+ | 176.40 грн |
| VS-3C06ET07S2L-M3 |
|
Виробник: Vishay Semiconductors
SiC Schottky Diodes RECT 650V 6A SM POWER SIC
SiC Schottky Diodes RECT 650V 6A SM POWER SIC
на замовлення 1271 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 255.80 грн |
| 10+ | 164.62 грн |
| 100+ | 100.55 грн |
| 500+ | 75.41 грн |