VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
| Кількість | Ціна |
|---|---|
| 1500+ | 21.58 грн |
| 3000+ | 19.05 грн |
| 4500+ | 18.16 грн |
| 7500+ | 16.11 грн |
| 10500+ | 15.56 грн |
| 15000+ | 15.03 грн |
Відгуки про товар
Написати відгук
Технічний опис VS-4ESH01-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Інші пропозиції VS-4ESH01-M3/86A за ціною від 15.99 грн до 89.65 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VS-4ESH01-M3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 29168 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
VS-4ESH01-M3/86A | Виробник : Vishay Semiconductors |
Rectifiers Hypfst Rct 4A 100V |
на замовлення 2033 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| VS-4ESH01-M3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 27ns; SMPC,TO277A; Ufmax: 930mV Semiconductor structure: single diode Mounting: SMD Type of diode: rectifying Case: SMPC; TO277A Features of semiconductor devices: ultrafast switching Reverse recovery time: 27ns Max. forward voltage: 0.93V Load current: 4A Max. off-state voltage: 0.1kV Quantity in set/package: 1500pcs. Kind of package: 7 inch reel |
товару немає в наявності |