VS-50MT060PHTAPbF Vishay General Semiconductor - Diodes Division


vs-50mt060phtapbf.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - MTP SWITCH
Packaging: Bulk
Package / Case: 12-MTP Module
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.64V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 12-MTP
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 305 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6000 pF @ 25 V
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Технічний опис VS-50MT060PHTAPbF Vishay General Semiconductor - Diodes Division

Description: MODULES IGBT - MTP SWITCH, Packaging: Bulk, Package / Case: 12-MTP Module, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.64V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: 12-MTP, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 121 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 305 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6000 pF @ 25 V.

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VS-50MT060PHTAPbF Виробник : Vishay vs-50mt060phtapbf.pdf IGBT Modules Modules IGBT - MTP SWITCH
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