VS-50MT060WHTAPBF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Configuration: Half Bridge
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Технічний опис VS-50MT060WHTAPBF Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP, Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V, Current - Collector Cutoff (Max): 400 µA, Power - Max: 658 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 114 A, Part Status: Obsolete, Supplier Device Package: MTP, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Input: Standard, Mounting Type: Chassis Mount, Package / Case: 12-MTP Module, Packaging: Tray, Configuration: Half Bridge.
Інші пропозиції VS-50MT060WHTAPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-50MT060WHTAPBF | Виробник : Vishay Semiconductors | IGBT Modules 600 Volt 50 Amp Half Bridge |
товару немає в наявності |