VS-60APF12-M3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 1+ | 683.45 грн |
| 10+ | 460.18 грн |
| 100+ | 348.81 грн |
| 500+ | 311.54 грн |
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Технічний опис VS-60APF12-M3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 60A TO247AC, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-247AC, Current - Average Rectified (Io): 60A, Technology: Standard, Reverse Recovery Time (trr): 480 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції VS-60APF12-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-60APF12-M3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.2KV 60A TO247ACCurrent - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 480 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-60APF12-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 830A; TO247AC-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 830A Case: TO247AC-3 Max. forward voltage: 1.4V Reverse recovery time: 480ns |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-60APF12-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| VS-60APF12-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 830A; TO247AC-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 830A
Case: TO247AC-3
Max. forward voltage: 1.4V
Reverse recovery time: 480ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 830A; TO247AC-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 830A
Case: TO247AC-3
Max. forward voltage: 1.4V
Reverse recovery time: 480ns
товару немає в наявності
В кошику
од. на суму грн.