VS-6ESU06-M3/86A Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 9+ | 38.61 грн |
| 10+ | 33.81 грн |
| 100+ | 22.28 грн |
| 500+ | 19.62 грн |
| 1000+ | 16.27 грн |
| 1500+ | 15.64 грн |
Відгуки про товар
Написати відгук
Технічний опис VS-6ESU06-M3/86A Vishay Semiconductors
Description: DIODE GEN PURP 600V 6A TO277A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 6A, Technology: Standard, Reverse Recovery Time (trr): 58 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Інші пропозиції VS-6ESU06-M3/86A за ціною від 40.32 грн до 47.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
VS-6ESU06-M3/86A | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
|
| VS-6ESU06-M3/86A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.92 грн |
| 10+ | 40.32 грн |