VS-80EBU02HN4 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 200V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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Технічний опис VS-80EBU02HN4 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 80A POWERTAB, Packaging: Tube, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 40 ns, Technology: Standard, Current - Average Rectified (Io): 80A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A, Current - Reverse Leakage @ Vr: 50 µA @ 200 V.