VS-85EPF12HE4 Vishay
Виробник: Vishay
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Технічний опис VS-85EPF12HE4 Vishay
Description: NEW INPUT DIODES - POWIRTAB, Packaging: Strip, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 480 ns, Technology: Standard, Current - Average Rectified (Io): 85A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції VS-85EPF12HE4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| VS-85EPF12HE4 | Виробник : Vishay Semiconductors | Rectifiers New Input Diodes - POWIRTAB |
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