
VS-8DKH02-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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Технічний опис VS-8DKH02-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 4A, Supplier Device Package: FlatPAK 5x6 (Dual), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Інші пропозиції VS-8DKH02-M3/I
Фото | Назва | Виробник | Інформація |
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VS-8DKH02-M3/I | Виробник : Vishay Semiconductors |
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