
VS-8ETH03-1HM3 Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 300V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Qualification: AEC-Q101
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Технічний опис VS-8ETH03-1HM3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 8A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 300 V, Qualification: AEC-Q101.
Інші пропозиції VS-8ETH03-1HM3
Фото | Назва | Виробник | Інформація |
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VS-8ETH03-1HM3 | Виробник : Vishay Semiconductors |
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VS-8ETH03-1HM3 | Виробник : VISHAY |
![]() Description: Diode: rectifying; THT; 300V; 8A; tube; Ifsm: 100A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Max. forward voltage: 1.25V Reverse recovery time: 35ns Max. forward impulse current: 100A Application: automotive industry |
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