Технічний опис VS-8ETH06-1-M3 Vishay
Description: DIODE GEN PURP 600V 8A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції VS-8ETH06-1-M3
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VS-8ETH06-1-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 8A TO262AAPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-8ETH06-1-M3 | Виробник : Vishay Semiconductors |
Rectifiers 600V 8A IF TO-262AA 90A IFSM |
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| VS-8ETH06-1-M3 | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; IPAK,TO262AA; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Max. load current: 16A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Max. forward voltage: 2.4V Max. forward impulse current: 90A Kind of package: tube |
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