VS-8ETX06S-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис VS-8ETX06S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 24 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції VS-8ETX06S-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-8ETX06S-M3 | Виробник : Vishay Semiconductors |
Rectifiers 600V 8A IF (TO-263AB) 110A IFSM |
товару немає в наявності |