VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Технічний опис VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 24 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції VS-8EWH02FNTR-M3 за ціною від 28.93 грн до 122.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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VS-8EWH02FNTR-M3 | Vishay Semiconductors |
Rectifiers Hyperfast 8A 200V 23ns |
на замовлення 3164 шт: термін постачання 21-30 дні (днів) |
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VS-8EWH02FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 8A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 3392 шт: термін постачання 21-31 дні (днів) |
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| VS-8EWH02FNTR-M3 |
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Виробник: Vishay Semiconductors
Rectifiers Hyperfast 8A 200V 23ns
Rectifiers Hyperfast 8A 200V 23ns
на замовлення 3164 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.09 грн |
| 10+ | 70.97 грн |
| 100+ | 46.32 грн |
| 500+ | 36.59 грн |
| 1000+ | 33.41 грн |
| 2000+ | 29.89 грн |
| 4000+ | 28.93 грн |
| VS-8EWH02FNTR-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.71 грн |
| 10+ | 74.71 грн |
| 100+ | 50.02 грн |
| 500+ | 37.01 грн |
| 1000+ | 33.82 грн |