Технічний опис VS-8EWS08STRRPBF VIHSAY
Description: DIODE STANDARD 800V 8A TO252AA, Current - Reverse Leakage @ Vr: 50 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-252AA (DPAK), Current - Average Rectified (Io): 8A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції VS-8EWS08STRRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VS-8EWS08STRRPBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 800V 8A TO252AACurrent - Reverse Leakage @ Vr: 50 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-252AA (DPAK) Current - Average Rectified (Io): 8A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |