VS-8EWS10STRR-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 8A TO252AA
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 8A
Technology: Standard
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Технічний опис VS-8EWS10STRR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 8A TO252AA, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-252AA (DPAK), Current - Average Rectified (Io): 8A, Technology: Standard.
Інші пропозиції VS-8EWS10STRR-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-8EWS10STRR-M3 | Виробник : Vishay Semiconductors |
 Rectifiers Input Diodes - D-PAK |
товару немає в наявності |