Технічний опис VS-C12ET07T-M3 Vishay Semiconductors
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 12A, Semiconductor structure: single diode, Case: TO220-2, Max. forward voltage: 1.65V, Max. forward impulse current: 80A, Kind of package: tube.
Інші пропозиції VS-C12ET07T-M3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
VS-C12ET07T-M3 | VISHAY |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.65V Max. forward impulse current: 80A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-C12ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.