VS-CPV363M4KPBF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 11A 36W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
NTC Thermistor: No
Supplier Device Package: IMS-2
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 36 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
Description: IGBT MODULE 600V 11A 36W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
NTC Thermistor: No
Supplier Device Package: IMS-2
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 36 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
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Технічний опис VS-CPV363M4KPBF Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 11A 36W IMS-2, Packaging: Bulk, Package / Case: 19-SIP (13 Leads), IMS-2, Mounting Type: Through Hole, Input: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A, NTC Thermistor: No, Supplier Device Package: IMS-2, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 36 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 740 pF @ 30 V.
Інші пропозиції VS-CPV363M4KPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-CPV363M4KPBF | Виробник : Vishay Semiconductors | IGBT Transistors 600 Volt 6.0 Amp |
товару немає в наявності |