VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 113 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції VS-E5TH3012S2L-M3 за ціною від 76.63 грн до 255.51 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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VS-E5TH3012S2L-M3 | Vishay Semiconductors |
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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VS-E5TH3012S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263AB Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 113 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1036 шт: термін постачання 21-31 дні (днів) |
|
| VS-E5TH3012S2L-M3 |
|
Виробник: Vishay Semiconductors
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT
Rectifiers 30A, 1200V, "H" Series GEN 5 Fred PT
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.20 грн |
| 10+ | 157.19 грн |
| 100+ | 102.17 грн |
| 500+ | 85.60 грн |
| 800+ | 76.63 грн |
| VS-E5TH3012S2L-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1036 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.51 грн |
| 10+ | 164.01 грн |
| 100+ | 122.31 грн |