VS-EBU8006HN4 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 80A POWERTAB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PowerTab®
Current - Average Rectified (Io): 80A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: PowerTab®
Packaging: Tube
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Технічний опис VS-EBU8006HN4 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 80A POWERTAB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 8 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 80 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PowerTab®, Current - Average Rectified (Io): 80A, Technology: Standard, Reverse Recovery Time (trr): 100 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: PowerTab®, Packaging: Tube.
Інші пропозиції VS-EBU8006HN4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-EBU8006HN4 | Виробник : Vishay Semiconductors |
Rectifiers Freds - POWIRTAB |
товару немає в наявності |