VS-ETF075Y60U Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 109A EMIPAK-2B
Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 294 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
Operating Temperature: 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
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Технічний опис VS-ETF075Y60U Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 109A EMIPAK-2B, Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 294 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, IGBT Type: Trench, Supplier Device Package: EMIPAK-2B, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A, Operating Temperature: 175°C (TJ), Configuration: Three Level Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: EMIPAK-2B, Packaging: Bulk.
Інші пропозиції VS-ETF075Y60U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VS-ETF075Y60U | Виробник : Vishay Semiconductors |
IGBT Modules 75A Half Bridge 3 Level Inverter |
товару немає в наявності |