Технічний опис VS-ETF150Y65U Vishay Semiconductors
Description: IGBT MODULE 650V 142A EMIPAK-2B, Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 417 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 142 A, IGBT Type: Trench, Supplier Device Package: EMIPAK-2B, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A, Operating Temperature: 175°C (TJ), Configuration: Three Level Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: EMIPAK-2B, Packaging: Tray.
Інші пропозиції VS-ETF150Y65U
| Фото | Назва | Виробник | Інформація |
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Ціна |
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VS-ETF150Y65U | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: IGBT MODULE 650V 142A EMIPAK-2BInput Capacitance (Cies) @ Vce: 6.6 nF @ 30 V Current - Collector Cutoff (Max): 100 µA Power - Max: 417 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 142 A IGBT Type: Trench Supplier Device Package: EMIPAK-2B NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A Operating Temperature: 175°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: EMIPAK-2B Packaging: Tray |
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