
VS-ETH3006-1-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 600V 30A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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Технічний опис VS-ETH3006-1-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2623, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 26 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-262-3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Інші пропозиції VS-ETH3006-1-M3
Фото | Назва | Виробник | Інформація |
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VS-ETH3006-1-M3 | Виробник : Vishay Semiconductors |
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VS-ETH3006-1-M3 | Виробник : VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Max. forward voltage: 2.65V Reverse recovery time: 26ns Max. forward impulse current: 180A |
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