VS-ETH3007THN3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 650V 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 37 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Grade: Automotive, Qualification: AEC-Q101.