VS-ETL015Y120H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
Current - Collector Cutoff (Max): 75 µA
Power - Max: 89 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: EMIPAK-2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
Operating Temperature: 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Packaging: Bulk
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Технічний опис VS-ETL015Y120H Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B, Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V, Current - Collector Cutoff (Max): 75 µA, Power - Max: 89 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 22 A, Part Status: Active, IGBT Type: Trench, Supplier Device Package: EMIPAK-2B, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A, Operating Temperature: 150°C (TJ), Input: Standard, Mounting Type: Chassis Mount, Package / Case: EMIPAK-2B, Packaging: Bulk.
Інші пропозиції VS-ETL015Y120H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-ETL015Y120H | Виробник : Vishay Semiconductors |
Rectifiers 15A Dbl Interleaved Boost Converter |
товару немає в наявності |