VS-FB190SA10
Виробник:
MOSFET N-CH 100V 190A SOT227 Транзистори
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис VS-FB190SA10
Description: MOSFET N-CH 100V 190A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tj), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V, Power Dissipation (Max): 568W (Tc), Vgs(th) (Max) @ Id: 4.35V @ 250µA, Supplier Device Package: SOT-227, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Інші пропозиції VS-FB190SA10
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
VS-FB190SA10 | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 100V 190A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tj) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4.35V @ 250µA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
VS-FB190SA10 | Vishay Semiconductors |
Discrete Semiconductor Modules 190 Amp 100 Volt |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-FB190SA10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-FB190SA10 |
|
Виробник: Vishay Semiconductors
Discrete Semiconductor Modules 190 Amp 100 Volt
Discrete Semiconductor Modules 190 Amp 100 Volt
товару немає в наявності
В кошику
од. на суму грн.