VS-FC80NA20 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 108A SOT227
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
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Технічний опис VS-FC80NA20 Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 108A SOT227, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V.
Інші пропозиції VS-FC80NA20
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-FC80NA20 | Виробник : Vishay Semiconductors | Discrete Semiconductor Modules Output & SW Modules - SOT-227 IGBT |
товару немає в наявності |