VS-GB100NH120N Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
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Технічний опис VS-GB100NH120N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 833 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V.
Інші пропозиції VS-GB100NH120N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| VS-GB100NH120N | Виробник : Vishay Semiconductors | IGBT Modules Output & SW Modules - DIAP IGBT |
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