VS-GB50LP120N Vishay General Semiconductor - Diodes Division


Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
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Технічний опис VS-GB50LP120N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 100A INT-A-PAK, Packaging: Bulk, Package / Case: INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ), NTC Thermistor: No, Supplier Device Package: INT-A-PAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 446 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V.

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VS-GB50LP120N Виробник : Vishay Semiconductors IGBT Modules Output & SW Modules - IAP IGBT
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