VS-GB50TP120N Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 446 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
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Технічний опис VS-GB50TP120N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK, Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 446 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 100 A, Part Status: Obsolete, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3 + 4), Packaging: Bulk.
Інші пропозиції VS-GB50TP120N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-GB50TP120N | Виробник : Vishay Semiconductors | IGBT Modules Output & SW Modules - IAP IGBT |
товару немає в наявності |