VS-GT100DA120UF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 187A 890W SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 187 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
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Технічний опис VS-GT100DA120UF Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 187A 890W SOT-227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: Trench, Current - Collector (Ic) (Max): 187 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 890 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V.
Інші пропозиції VS-GT100DA120UF за ціною від 2244.01 грн до 2951.54 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||
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VS-GT100DA120UF | Виробник : Vishay Semiconductors |
IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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VS-GT100DA120UF | Виробник : VISHAY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 100A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 240A Technology: Trench Features of semiconductor devices: integrated anti-parallel diode Mechanical mounting: screw |
товару немає в наявності |