VS-GT100TP60N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 600V 160A INT-A-PAK, Input Capacitance (Cies) @ Vce: 7.71 nF @ 30 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 417 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 160 A, Part Status: Last Time Buy, IGBT Type: Trench, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, Operating Temperature: 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3 + 4), Packaging: Bulk.