VS-GT100TS065N VISHAY
Виробник: VISHAY
Description: VISHAY - VS-GT100TS065N - IGBT-Modul, Halbbrücke, 96 A, 259 W, 175 °C, INT-A-PAK
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: IGBT 4 [Trench]
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: -
IGBT-Anschluss: Schraubanschluss
Verlustleistung: 259W
SVHC: No SVHC (27-Jun-2024)
Bauform - Transistor: INT-A-PAK
Dauerkollektorstrom: 96A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Halbbrücke
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
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Технічний опис VS-GT100TS065N VISHAY
Description: VISHAY - VS-GT100TS065N - IGBT-Modul, Halbbrücke, 96 A, 259 W, 175 °C, INT-A-PAK, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: IGBT 4 [Trench], hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: -, IGBT-Anschluss: Schraubanschluss, Verlustleistung: 259W, SVHC: No SVHC (27-Jun-2024), Bauform - Transistor: INT-A-PAK, Dauerkollektorstrom: 96A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 650V, IGBT-Konfiguration: Halbbrücke, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Betriebstemperatur, max.: 175°C.
Інші пропозиції VS-GT100TS065N
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
VS-GT100TS065N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 650V 96A INT-A-PAK IGBT Current - Collector Cutoff (Max): 50 µA Power - Max: 259 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 96 A IGBT Type: Trench Field Stop Supplier Device Package: INT-A-PAK IGBT NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. |
 |
VS-GT100TS065N | Vishay Semiconductors |
IGBT Modules Modules IGBT - IAP IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-GT100TS065N | VISHAY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 72A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 72A Case: INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 240A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-GT100TS065N |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 650V 96A INT-A-PAK IGBT
Current - Collector Cutoff (Max): 50 µA
Power - Max: 259 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
IGBT Type: Trench Field Stop
Supplier Device Package: INT-A-PAK IGBT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: IGBT MOD 650V 96A INT-A-PAK IGBT
Current - Collector Cutoff (Max): 50 µA
Power - Max: 259 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
IGBT Type: Trench Field Stop
Supplier Device Package: INT-A-PAK IGBT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| VS-GT100TS065N |
|
Виробник: Vishay Semiconductors
IGBT Modules Modules IGBT - IAP IGBT
IGBT Modules Modules IGBT - IAP IGBT
товару немає в наявності
В кошику
од. на суму грн.
| VS-GT100TS065N |
|
Виробник: VISHAY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 72A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 72A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 72A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 72A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.