Технічний опис VS-GT300YH120N Vishay
Description: IGBT MOD 1200V 341A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 8), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ), NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: Trench, Current - Collector (Ic) (Max): 341 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1042 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 36 nF @ 30 V.
Інші пропозиції VS-GT300YH120N
Фото | Назва | Виробник | Інформація |
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VS-GT300YH120N | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: Double INT-A-PAK (3 + 8) Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ) NTC Thermistor: No Supplier Device Package: Double INT-A-PAK IGBT Type: Trench Current - Collector (Ic) (Max): 341 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1042 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 36 nF @ 30 V |
товару немає в наявності |
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VS-GT300YH120N | Виробник : Vishay Semiconductors |
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товару немає в наявності |