Технічний опис VS-GT300YH120N Vishay Semiconductors
Description: IGBT MOD 1200V 341A INT-A-PAK, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Double INT-A-PAK (3 + 8), Packaging: Bulk, Input Capacitance (Cies) @ Vce: 36 nF @ 30 V, Current - Collector Cutoff (Max): 300 µA, Power - Max: 1042 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 341 A, IGBT Type: Trench, Supplier Device Package: Double INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ), Operating Temperature: -40°C ~ 150°C (TJ).
Інші пропозиції VS-GT300YH120N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VS-GT300YH120N | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: IGBT MOD 1200V 341A INT-A-PAKConfiguration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Packaging: Bulk Input Capacitance (Cies) @ Vce: 36 nF @ 30 V Current - Collector Cutoff (Max): 300 µA Power - Max: 1042 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 341 A IGBT Type: Trench Supplier Device Package: Double INT-A-PAK NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ) Operating Temperature: -40°C ~ 150°C (TJ) |
товару немає в наявності |
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| VS-GT300YH120N | Виробник : VISHAY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: MOSFET half-bridge + serial diodes Max. off-state voltage: 1.2kV Collector current: 300A Case: Dual INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 720A Technology: Trench Mechanical mounting: screw |
товару немає в наявності |